1 transistor 2.1 0.1 1.3 0.1 0.9 0.1 0.7 0.1 0.3 +0.1 ? 0.15 +0.1 ?.05 2.0 0.2 1.25 0.1 0.425 0.425 1 3 2 0.65 0.2 0.65 0 to 0.1 0.2 0.1 2sb1218a silicon pnp epitaxial planer type for general amplification complementary to 2sd1819a n features l high foward current transfer ratio h fe . l s-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:emitter eiaj:scC70 3:collector s-mini type package symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C45 C45 C7 C200 C100 150 150 C55 ~ +150 unit v v v ma ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol i cbo i ceo v cbo v ceo v ebo h fe * v ce(sat) f t c ob conditions v cb = C20v, i e = 0 v ce = C10v, i b = 0 i c = C10 m a, i e = 0 i c = C2ma, i b = 0 i e = C10 m a, i c = 0 v ce = C10v, i c = C2ma i c = C100ma, i b = C10ma v cb = C10v, i e = 1ma, f = 200mhz v cb = C10v, i e = 0, f = 1mhz min C45 C45 C7 160 typ C 0.3 80 2.7 max C0.1 C100 460 C 0.5 unit m a m a v v v v mhz pf * h fe rank classification rank q r s h fe 160 ~ 260 210 ~ 340 290 ~ 460 marking symbol bq br bs marking symbol : b
2 transistor 2sb1218a 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 0 ?2 ?0 ? ? ? ? 0 ?20 ?00 ?0 ?0 ?0 ?0 ta=25?c ?50 m a ?00 m a ?50 m a ?00 m a ?0 m a i b =?00 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 ?50 ?50 ?00 0 ?0 ?0 ?0 ?0 ?0 ?0 v ce =?v ta=25?c base current i b ( m a ) collector current i c ( ma ) 0 ?.8 ?0.6 ?.2 0 ?00 ?00 ?00 ?50 ?50 ?00 ?0 ?50 v ce =?v ta=25?c base to emitter voltage v be ( v ) base current i b ( m a ) 0 ?.0 ?.6 ?0.4 ?.2 ?0.8 0 ?40 ?00 ?60 ?20 ?0 ?0 v ce =?v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.001 ?0.003 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) ? ?0 ?00 ?000 ? ?0 ?00 0 600 500 400 300 200 100 v ce =?0v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 0 160 120 40 100 140 80 20 60 v cb =?0v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) ? ? ?0 ?0 ?00 0 8 6 2 5 7 4 1 3 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) p c ta i c v ce i c i b i b v be i c v be v ce(sat) i c h fe i c f t i e c ob v cb
3 transistor 2sb1218a 0.01 0.1 1 10 0.03 0.3 3 0 6 5 4 3 2 1 v cb =?v f=1khz r g =2k w ta=25?c emitter current i e ( ma ) noise figure nf ( db ) 0.1 0.3 1 3 10 0 20 16 12 8 4 18 14 10 6 2 v cb =?v r g =50k w ta=25?c f=100hz 10khz 1khz emitter current i e ( ma ) noise figure nf ( db ) 0.1 0.3 1 3 10 1 300 100 30 10 3 v ce =?v f=270hz ta=25?c h fe h oe ( m s) h ie (k w ) h re ( 5 10 ? ) emitter current i e ( ma ) h parameter ? ? ?0 ?0 ?00 1 300 100 30 10 3 i e =2ma f=270hz ta=25?c h fe h oe ( m s) h ie (k w ) h re ( 5 10 ? ) collector to emitter voltage v ce ( v ) h parameter nf i e nf i e h parameter i e h parameter v ce
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